MRF7S19080HR3 MRF7S19080HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATIO
N DISTORTION (dBc)
-- 7 0
-- 1 0
1 10010
-- 4 0
-- 5 0
-- 3 0
-- 2 0
-- 6 0
7th Order
5th Order
3rd Order
400
VDD
=28Vdc,IDQ
= 750 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO--TONE SPACING (MHz)
1 10010
-- 6 0
0
VDD
=28Vdc,Pout
= 80 W (PEP), IDQ
= 750 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
IM3--U
-- 1 0
-- 2 0
-- 4 0
IMD, INTERMODULATIO
N DISTORTION (dBc)
-- 5 0
-- 3 0
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
Figure 9. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
30
Actual
Ideal
0
-- 2
-- 4
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
20
40 50
60
30
60
55
50
45
40
35
η
D
,
DRAIN EFFICIENCY (%)
VDD
=28Vdc,IDQ
= 750 mA
f = 1960 MHz, Input PAR = 7.5 dB
-- 1 d B = 2 3 W
--2dB=32.2W
10
--3dB=52.4W
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Pout, OUTPUT POWER (dBm)
ACPR, UPPER AND LOWER RESULTS (dBc)
Uncorrected, Upper and Lower
DPD Corrected
No Memory Correction
DPD Corrected, with Memory Correction
VDD
=28Vdc,IDQ
= 750 mA, f = 1960 MHz
Single--Carrier W--CDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
300
14
20
0
66
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD
=28Vdc
IDQ
= 750 mA
f = 1960 MHz
TC
=--30_C
25_C
85_C
-- 3 0_C
25_C
85_C
10
1
19
18
17
16
15
55
44
33
22
11
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
100
-- 7 0
-- 2 0
34
-- 4 0
-- 5 0
-- 6 0
35 36 37 38 39 40 41 42 43 44
-- 3 0
0.1
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